Titre du document / Document title

Reversibility of the light-induced saturation and annealing of defects in a-Si:H

Auteur(s) / Author(s)

GLESKOVA H. ; MORIN P. A. ; BULLOCK J. ; WAGNER S. ;

Affiliation(s) du ou des auteurs / Author(s) Affiliation(s)

Princeton univ., dep. electrical eng., Princeton NJ 08544, ETATS-UNIS

Résumé / Abstract

Results on the reversibility of the light-induced saturation and dark- and light-annealing of the deep-level defects in a-S:H films are presented. The value of the saturated defect density (N_sat) in three samples obtained after initial light-soaking was observed to decrease upon cyclic light-annealing and saturation. This drop in N_sat was observed in two samples after the second illumination while in another sample the drop was observed only after a series of experiments carriede out to determine the temperature dependence of N_sat

Revue / Journal Title

Materials letters    ISSN  0167-577X   CODEN MLETDJ 

Source / Source

1992, vol. 13, n^o4-5, pp. 279-283 (17 ref.)

Langue / Language

Anglais

Editeur / Publisher

Elsevier, Amsterdam, PAYS-BAS  (1982) (Revue)

Mots-clés anglais / English Keywords

Experimental study

;

Defect

;

Annealing

;

Photoinduced effect

;

Saturation

;

Photoconductivity

;

Amorphous state

;

Inorganic compound

;

Mots-clés français / French Keywords

Etude expérimentale

;

Défaut

;

Recuit

;

Effet photoinduit

;

Saturation

;

Photoconductivité

;

Etat amorphe

;

Composé minéral

;

Système hydrogène silicium

;

Mots-clés espagnols / Spanish Keywords

Estudio experimental

;

Defecto

;

Recocido

;

Efecto fotoinducido

;

Saturación

;

Fotoconductividad

;

Estado amorfo

;

Compuesto inorgánico

;

Localisation / Location

INIST-CNRS, Cote INIST : 19369, 35400002122308.0170