Titre du document / Document title

Quasidiffusion and the localized phonon source in photoexcited Si

Auteur(s) / Author(s)

MSALL M. E. ⁽¹⁾ ; TAMURA S. ; ESIPOV S. E. ⁽¹⁾ ; WOLFE J. P. ⁽¹⁾ ;

Affiliation(s) du ou des auteurs / Author(s) Affiliation(s)

⁽¹⁾ Univ. Illinois Urbana-Champaign, physics dep., materials res. lab., Urbana IL 61801, ETATS-UNIS

Résumé / Abstract

Previous observations of heat pulses produced by localized photoexcitation of silicon do not support the predictions of phonon «quasidiffusion» via anharmonic decay and elastic scattering. Our experiments, with controlled boundary conditions, verify that quasidiffusive theory is relevant in Si under very weak photoexcitation. Beyond this domain a transition to a localized source of low frequency phonons is attributed to excited carrier interactions. Photoluminescence experiments confirm the presence of electron-hole droplets coincident with this localized phonon source

Revue / Journal Title

Physical review letters   ISSN 0031-9007   CODEN PRLTAO 

Source / Source

1993, vol. 70, n^o22, pp. 3463-3466 (14 ref.)

Langue / Language

Anglais

Editeur / Publisher

American Physical Society, Ridge, NY, ETATS-UNIS  (1958) (Revue)

Mots-clés anglais / English Keywords

Experimental study ; Localized phonon ; Phonon scattering ; Silicon ; Electron hole drop ;

Mots-clés français / French Keywords

Etude expérimentale ; Phonon localisé ; Diffusion phonon ; Silicium ; Goutte électron trou ;

Mots-clés espagnols / Spanish Keywords

Estudio experimental ; Fonón localizado ; Difusión fonón ; Silicio ; Gota electrón agujero ;

Localisation / Location

INIST-CNRS, Cote INIST : 8895, 35400003395333.0260