Titre du document / Document title
Acoustic-phonon emission due to localized photoexcitation of Si : electron-hole droplets versus the phonon hot spot
Auteur(s) / Author(s)
ESIPOV S. E. ;
MSALL M. ;
WOLFE J. P. ;
Affiliation(s) du ou des auteurs / Author(s) Affiliation(s)
Univ. Illinois Urbana-Champaign, dep. physics, material res. lab., Urbana IL 61801, ETATS-UNIS
Résumé / Abstract
We consider theoretically the evolution of nonequilibrium carriers and phonons created by optical excitation of Si at low temperatures (T<2 K) in light of recent heat-pulse experiments. At low excitation levels (≤20 W/mm
2), the detected phonons indicate a quasidiffusive propagation mode, involving anharmonic decay and elastic scattering of relatively high-frequency (≥1 THz) phonons. At intermediate excitation densities (≥20 W/mm
2) a transition is observed to a localized source of relatively low-frequency (≤1 THz) phonons. The threshold for this effect is much lower than that predicted for the formation of a hot spot involving only the phonon system
Revue / Journal Title
Physical review. B, Condensed matter
ISSN
0163-1829
CODEN PRBMDO
Source / Source
1993, vol. 47, n
o20, pp. 13330-13337 (19 ref.)
Langue / Language
Anglais
Editeur / Publisher
American Physical Society, Woodbury, NY, ETATS-UNIS
(1978-1997)
(Revue)
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Localisation / Location
INIST-CNRS, Cote INIST : 144 B, 35400003404374.0290
Nº notice refdoc (ud4) : 4817351
