Titre du document / Document title

Single-electron tunnelling observed at room temperature by scanning-tunnelling microscopy

Auteur(s) / Author(s)

SCHÖNENBERGER C. ; VAN HOUTEN H. ; DONKERSLOOT H. C. ;

Affiliation(s) du ou des auteurs / Author(s) Affiliation(s)

Philips Research Laboratories, 5600 JA Eindhoven, PAYS-BAS

Résumé / Abstract

Ultrasmall (≤5nm) in lateral diameter) double-barrier tunnel junctions have been realized using a scanning tunnelling microscope, and an optimized metal particel-oxide-metallic substrate system. Three electrical transport effects, all in good agreement with the semi-classical theory of single-electron tunnelling, have been found at room temperature: the Coulomb gap, the Coulomb staircase and zeroi-bias conductance oscillations as a function of tip-particle distance

Revue / Journal Title

Europhysics letters   ISSN 0295-5075   CODEN EULEEJ 

Source / Source

1992, vol. 20, n^o3, pp. 249-254 (13 ref.)

Langue / Language

Anglais

Editeur / Publisher

EDP sciences, Les Ulis, FRANCE  (1986) (Revue)

Mots-clés anglais / English Keywords

Scanning tunneling microscopy ; Room temperature ; Tunnel effect ; Tunnel junction ; Metal particle ; Oxides ; Single electron ;

Mots-clés français / French Keywords

Microscopie tunnel balayage ; Température ambiante ; Effet tunnel ; Jonction tunnel ; Particule métallique ; Oxyde ; Substrat métallique ; Electron unique ;

Mots-clés espagnols / Spanish Keywords

Microscopía túnel barrido ; Temperatura ambiente ; Efecto túnel ; Unión túnel ; Partícula metálica ; Óxido ;

Localisation / Location

INIST-CNRS, Cote INIST : 20790, 35400003178416.0100