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Titre du document / Document title

TiW(N) as diffusion barriers between Cu and Si

Auteur(s) / Author(s)

JUNG-CHAO CHIOU ; KUEN-CHI JUANG ; MAO-CHIEH CHEN ;

Affiliation(s) du ou des auteurs / Author(s) Affiliation(s)

National Chiao-Tung univ., dep. electronics eng. and inst. electronics, Hsinchu, TAIWAN, PROVINCE DE CHINE

Résumé / Abstract

TiW(N) and TiW are employed as diffusion barriers in the Cu/barrier/Si system. The thermal stability of Cu/TiW(N) and Cu/TiW contacted p+n junction diodes was investigated with respect to metallurgical reaction and electrical characteristics. The as-deposited TiW film formed body-centered cubic (bcc) structure, while the TiW(N) film formed face-centered cubic (fcc) structure. The Cu/TiW(600 A)/Si structure remains intact up to 750°C 30 s rapid thermal anneal (RTA) in N2 ambient ; at 775°C, the Cu diffuses through the TiW layer to form Cu3Si with an overlayer of Ti-W-Si on the surface. The Cu/TiW(N)(600 A)/Si system is metallurgically stable up to 1000°C 30 s RTA in N2 ambient. The Cu/TiW(600 Å)/p+n junction diodes were able to withstand the RTA annealing up to 675°C without losing the device integrity ; however, the devices' characteristics are completely destroyed at temperatures above 775°C inconsistent with the occurrence of dramatic metallurgical reaction. The Cu/TiW(N)(600 Å)/p+n junction diodes were able to withstand the RTA treatment up to 650°C without electrical characteristic degradation ; and the devices' characteristics degrade gradually with the increase of RTA temperature.

Revue / Journal Title

Journal of the Electrochemical Society    ISSN  0013-4651   CODEN JESOAN 

Source / Source

1995, vol. 142, no7, pp. 2326-2331 (17 ref.)

Langue / Language

Anglais

Editeur / Publisher

Electrochemical Society, Pennington, NJ, ETATS-UNIS  (1948) (Revue)

Mots-clés anglais / English Keywords

Experimental study

;

Diffusion barriers

;

Solid-solid interfaces

;

Copper

;

Silicon

;

Diffusion

;

Junction diodes

;

Titanium alloys

;

Tungsten alloys

;

Binary alloys

;

Nitrogen additions

;

Transition elements

;

Transition element alloys

;

Mots-clés français / French Keywords

Etude expérimentale

;

Barrière diffusion

;

Interface solide solide

;

Cuivre

;

Silicium

;

Diffusion(transport)

;

Diode jonction

;

Titane alliage

;

Tungstène alliage

;

Alliage binaire

;

Addition azote

;

Cu

;

Si

;

Alliage TiW

;

Ti W

;

Métal transition

;

Métal transition alliage

;

Localisation / Location

INIST-CNRS, Cote INIST : 4925, 35400005190781.0430

Nº notice refdoc (ud4) : 3606659



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