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Titre du document / Document title

Sputtering of group-IIIa elements. Properties of the metal cluster formation mechanism

Auteur(s) / Author(s)

LILL T. ; CALAWAY W. F. ; MA Z. ; PELLIN M. J. ;

Affiliation(s) du ou des auteurs / Author(s) Affiliation(s)

Argonne national lab., materials sci. div., Argonne IL 60439, ETATS-UNIS

Résumé / Abstract

Neutral and positively charged clusters have been produced by 4 keV argon ion bombardment of liquid gallium and the liquid gallium-indium eutectic alloy. The yields, kinetic energy distributions, and the abundance distributions have been studied by time-of-flight mass spectrometry coupled with single photon post-ionization of the neutrals. The results are compared to experimental data on cluster sputtering from polycrystalline aluminum and indium previously obtained in our laboratory. The abundance distributions of the neutral and ionic mixed gallium-indium clusters with equal number of atoms are found to be statistical. Since the first atomic layer of the gallium-indium system is labeled due to surface segregation, the depth of origin of these clusters becomes experimental assessable

Revue / Journal Title

Surface science    ISSN  0039-6028   CODEN SUSCAS 

Source / Source

1995, vol. 322, no1-3, pp. 361-372 (35 ref.)

Langue / Language

Anglais

Editeur / Publisher

Elsevier, Kidlington, ROYAUME-UNI  (1964) (Revue)

Mots-clés anglais / English Keywords

Experimental study

;

Sputtering

;

Metal cluster

;

SIMS

;

Gallium

;

Indium

;

Aluminium

;

Ion beams

;

Mots-clés français / French Keywords

Etude expérimentale

;

Pulvérisation irradiation

;

Agrégat métallique

;

SIMS

;

Gallium

;

Indium

;

Aluminium

;

Faisceau ion

;

Ga

;

In

;

Al

;

Mots-clés espagnols / Spanish Keywords

Agregado metálico

;

Localisation / Location

INIST-CNRS, Cote INIST : 12426, 35400005803045.0360

Nº notice refdoc (ud4) : 3421606



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