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Titre du document / Document title

Reactive ion etching mechanism of copper film in chlorine-based electron cyclotron resonance plasma

Auteur(s) / Author(s)

LEE S.-K. (1) ; CHUN S.-S. (1) ; HWANG C. (2) ; LEE W.-J. (1) ;

Affiliation(s) du ou des auteurs / Author(s) Affiliation(s)

(1) Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Taejon 305-701, COREE, REPUBLIQUE DE
(2) Materials Evaluation Center, Korea Research Institute of Standards and Science, Taejon, COREE, REPUBLIQUE DE

Résumé / Abstract

In order to investigate the reactive ion etching mechanism of the copper films in CCl4 /N2 electron cyclotron resonance (ECR) plasma, the dependences of the copper etch rate on various etching parameters, the etch products as well as their depth distributions and the concentration of chlorine radicals in the plasma were examined. It was found that the etching species in CCl4 plasma is not CClxbut atomic chlorine (Cl) and the etch product formed at the surface of the copper film is not CuCl but CuCl2. In order to carry out reactive ion etching of copper film in chlorine-based plasma the substrate temperature should be above 210°C1 below which the etch product has too low vapor pressure to be volatile. At the substrate temperature above 210°C, the copper etch rate is not limited by the removal rate of the etch product but limited by its formation rate which depends on the concentration of chlorine radicals and the reaction rate between the etching species and the copper film. The etch rate is also increased by applying a negative bias to the substrate, the role of which is the enhancement of the formation rate of the etch product by activating chemical reactions due to energetic ion bombardment. Adding small amounts of CF4 to CCl4plasma increases the etch rate dependence on ion bombardment energy by forming involatile copper fluoride on the etched surface.

Revue / Journal Title

Japanese journal of applied physics    ISSN  0021-4922   CODEN JJAPA5 

Source / Source

1997, vol. 36 (1), no1A, pp. 50-55 (14 ref.)

Langue / Language

Anglais

Editeur / Publisher

Japanese journal of applied physics, Tokyo, JAPON  (1962) (Revue)

Mots-clés anglais / English Keywords

Experimental study

;

Surface treatments

;

Thin films

;

Copper

;

Plasma etching

;

Reactive ion etching

;

Electron cyclotron-resonance

;

Photoelectron spectroscopy

;

X radiation

;

Emission spectroscopy

;

Optical spectrometry

;

Chlorine

;

Mechanism

;

Transition elements

;

Mots-clés français / French Keywords

Etude expérimentale

;

Traitement surface

;

Couche mince

;

Cuivre

;

Gravure plasma

;

Gravure ionique réactive

;

Résonance cyclotronique électronique

;

Spectrométrie photoélectron

;

Rayon X

;

Spectrométrie émission

;

Spectrométrie optique

;

Chlore

;

Mécanisme

;

Cu

;

Métal transition

;

Mots-clés espagnols / Spanish Keywords

Grabado plasma

;

Grabado iónico reactivo

;

Espectrometría óptica

;

Mecanismo

;

Localisation / Location

INIST-CNRS, Cote INIST : 9959, 35400006289269.0090

Nº notice refdoc (ud4) : 2556775



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