RefDoc
Haut

Faire une nouvelle recherche
Make a new search
Lancer la recherche


Titre du document / Document title

Morphology and optical properties of Mg doped GaN nanowires in dependence of growth temperature

Auteur(s) / Author(s)

LIMBACH F. ; SCHÄFER-NOLTE E. O. ; CATERINO R. ; GOTSCHKE T. ; STOICA T. ; SUTTER E. ; CALARCO R. ;

Résumé / Abstract

The influence of the substrate temperature and Mg doping on the morphological and optical properties of catalyst-free GaN nanowires grown by plasma-assisted molecular beam epitaxy on Si(111) has been investigated in a large temperature range between 665°C and 785°C. The density and wire sizes in Mg-doped nanowires are found to change with substrate temperature in a similar way as undoped nanowires. Between 725 °C and 785 °C a trimodal size distribution and an increase of the wire density from 5.0×109 cm-2 to 9.5×109 cm-2 were observed. Transmission electron microscopy indicates that the upper parts of the nanowires are free of structural defects. Raman spectroscopy measurements confirm a high crystalline quality of doped wires, with a line width of the E2H of 3.3 cm-1 for samples grown at Ts=785 °C. Photoluminescence measurements show a strong influence of Mg on the emission properties, namely the increase of the donor-acceptor pair emission and its phonon replicas.

Revue / Journal Title

Journal of optoelectronics and advanced materials    ISSN  1454-4164 

Source / Source

2010, vol. 12, no6, pp. 1433-1437 [5 page(s) (article)]

Langue / Language

Anglais

Editeur / Publisher

INOE 2000, Bucuresti,   (1999) (Revue)

Localisation / Location

INIST-CNRS, Cote INIST : 27497, 35400018077900.0310

Nº notice refdoc (ud4) : 22965760



Faire une nouvelle recherche
Make a new search
Lancer la recherche
Bas