Titre du document / Document title
Morphology and optical properties of Mg doped GaN nanowires in dependence of growth temperature
Auteur(s) / Author(s)LIMBACH F.
SCHÄFER-NOLTE E. O.
Résumé / Abstract
The influence of the substrate temperature and Mg doping on the morphological and optical properties of catalyst-free GaN nanowires grown by plasma-assisted molecular beam epitaxy on Si(111) has been investigated in a large temperature range between 665°C and 785°C. The density and wire sizes in Mg-doped nanowires are found to change with substrate temperature in a similar way as undoped nanowires. Between 725 °C and 785 °C a trimodal size distribution and an increase of the wire density from 5.0×109
were observed. Transmission electron microscopy indicates that the upper parts of the nanowires are free of structural defects. Raman spectroscopy measurements confirm a high crystalline quality of doped wires, with a line width of the E2H
of 3.3 cm-1
for samples grown at Ts
=785 °C. Photoluminescence measurements show a strong influence of Mg on the emission properties, namely the increase of the donor-acceptor pair emission and its phonon replicas.
Revue / Journal TitleJournal of optoelectronics and advanced materials
Source / Source
2010, vol. 12, no
6, pp. 1433-1437 [5 page(s) (article)]
Langue / Language
Editeur / Publisher
INOE 2000, Bucuresti,
Localisation / Location
INIST-CNRS, Cote INIST : 27497, 35400018077900.0310
Nº notice refdoc (ud4) : 22965760