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Titre du document / Document title

Characteristics of an AlGaInP-Based Light Emitting Diode With an Indium-Tin-Oxide (ITO) Direct Ohmic Contact Structure

Auteur(s) / Author(s)

LIU Yi-Jung (1) ; YEN Chih-Hung (1) ; YU Kuo-Hui (2) ; LIN Pei-Ling (2) ; CHEN Li-Yang (1) ; TSAI Tsung-Han (1) ; TSAI Tsung-Yuan (1) ; LIU Wen-Chau (1) ;

Affiliation(s) du ou des auteurs / Author(s) Affiliation(s)

(1) Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan 70101, TAIWAN, PROVINCE DE CHINE
(2) Department of Epitaxy Research and Development, Chi Mei Lighting Technology Company, Tainan, TAIWAN, PROVINCE DE CHINE

Résumé / Abstract

An AlGaInP multi-quantum-well (MQW) light-emitting diode (LED) with a direct Ohmic contact structure, formed by an indium-tin-oxide (ITO) transparent film and AuBe diffused thin layer, is fabricated and studied. By the deposition of an AuBe metallic thin layer on the surface of Mg-doped GaP window layer, followed by a thermal activation process, a direct Ohmic contact between ITO and p-GaP layers can be obtained. Experimentally, under an injection current of 20 mA, a dynamic resistance of 5.7 Ω and a forward voltage of 1.91 V, are obtained. In addition, a higher external quantum efficiency of 9.7 % and a larger maximum light output power of 26.6 mW are found for the studied LED. As compared with the conventional LED without this structure, the external quantum efficiency of the studied device is increased by 26 % under the injection current of 100 mA. This is mainly attributed to the reduced series resistance resulted from the relatively uniform distribution of AuBe atoms near the GaP layer surface and the effective current spreading ability by the use of ITO film. Moreover, the life behavior is not degraded by using this AuBe diffused layer for the studied LED under a 20 mA operation condition.

Revue / Journal Title

IEEE journal of quantum electronics    ISSN  0018-9197   CODEN IEJQA7 

Source / Source

2010, vol. 46, no1-2, pp. 246-252 [7 page(s) (article)] (23 ref.)

Langue / Language

Anglais

Editeur / Publisher

Institute of Electrical and Electronics Engineers, New York, NY, ETATS-UNIS  (1965) (Revue)

Mots-clés anglais / English Keywords

Tin

;

Indium oxide

;

Aluminium phosphide

;

Multiple quantum well

;

Quantum well

;

Reliability

;

Output power

;

Quantum yield

;

Light emitting diode

;

Injection current

;

Mots-clés français / French Keywords

8560J

;

AlGaInP

;

Etain

;

Oxyde d'indium

;

Phosphure d'aluminium

;

Puits quantique multiple

;

Puits quantique

;

Fiabilité

;

Puissance sortie

;

Rendement quantique

;

Diode électroluminescente

;

Courant injection

;

Mots-clés espagnols / Spanish Keywords

Estaño

;

Indio óxido

;

Aluminio fosfuro

;

Pozo cuántico múltiple

;

Pozo cuántico

;

Fiabilidad

;

Potencia salida

;

Rendimiento quántico

;

Diodo electroluminescente

;

Corriente inyección

;

Mots-clés d'auteur / Author Keywords

AlGaInP

;

AuBe diffused layer

;

indium tin oxide (ITO)

;

junction temperature

;

light-emitting diode (LED)

;

multiple quantum-well (MQW)

;

reliability

;

Localisation / Location

INIST-CNRS, Cote INIST : 222 K, 35400018087115.0340

Nº notice refdoc (ud4) : 22492720



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