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Titre du document / Document title

Semiconductor detectors for high radiation fields: microscopic processes in materials and the control of device parameters

Auteur(s) / Author(s)


Résumé / Abstract

The knowledge of the effects of radiation in semiconductor devices, in particular in detectors, represents an important and active field of research. The influence of isovalent impurities, carbon and germanium, on the radiation damage of silicon for detectors is investigated in the frame of a quantitative phenomenological model for defect kinetics, developed previously by the authors. The concentrations of defects induced by irradiation in materials with different doping levels are calculated, as well as the leakage current and effective carrier concentrations in p-n junction detectors made from these materials. The beneficial effect of Ge on the radiation damage of silicon is deduced.

Revue / Journal Title

Journal of optoelectronics and advanced materials    ISSN  1454-4164 

Source / Source

2009, vol. 11, no12, pp. 2150-2154 [5 page(s) (article)]

Langue / Language


Editeur / Publisher

INOE 2000, Bucuresti,   (1999) (Revue)

Localisation / Location

INIST-CNRS, Cote INIST : 27497, 35400018659699.0450

Nº notice refdoc (ud4) : 22218615

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