Titre du document / Document title
Semiconductor detectors for high radiation fields: microscopic processes in materials and the control of device parameters
Auteur(s) / Author(s)LAZANU S.
CIUREA M. L.
Résumé / Abstract
The knowledge of the effects of radiation in semiconductor devices, in particular in detectors, represents an important and active field of research. The influence of isovalent impurities, carbon and germanium, on the radiation damage of silicon for detectors is investigated in the frame of a quantitative phenomenological model for defect kinetics, developed previously by the authors. The concentrations of defects induced by irradiation in materials with different doping levels are calculated, as well as the leakage current and effective carrier concentrations in p-n junction detectors made from these materials. The beneficial effect of Ge on the radiation damage of silicon is deduced.
Revue / Journal TitleJournal of optoelectronics and advanced materials
Source / Source
2009, vol. 11, no
12, pp. 2150-2154 [5 page(s) (article)]
Langue / Language
Editeur / Publisher
INOE 2000, Bucuresti,
Localisation / Location
INIST-CNRS, Cote INIST : 27497, 35400018659699.0450
Nº notice refdoc (ud4) : 22218615