Titre du document / Document title

Effect of Interfacial Properties of p-GaN/Sputter-Deposited NiAg-Based Electrode on Optical Properties of Vertical GaN-Based LEDs

Auteur(s) / Author(s)

KIM Sunjung ;

Résumé / Abstract

The influence of the interfacial adhesion and reflectance of a p-GaN/NiAgNiAu p-electrode on the optical properties of vertical GaN-based light emitting diodes (LEDs) was investigated. The thickness of the sputter-deposited Ni ohmic contact was varied from 2 to 100 nm. The p-electrode with a 2 nm thick Ni layer showed the highest adhesion strength of 160 MPa to the p-GaN and the highest reflectance of 80.79% after annealing because all the Ni atoms participated in the indiffusion into p-GaN and formed a transparent NiO. The NiAgNiAu p-electrodes with a higher reflectance led to the improved output power of the vertical LEDs regardless of the interfacial adhesion strength of p-GaN/Ni.

Revue / Journal Title

Electrochemical and solid-state letters    ISSN  1099-0062 

Source / Source

2009, vol. 12, n^o12, [Note(s): H441-H444]

Langue / Language

Anglais

Editeur / Publisher

Institute of Electrical and Electronics Engineers, Pennington, NJ, ETATS-UNIS  (1998) (Revue)

Localisation / Location

INIST-CNRS, Cote INIST : 26649, 35400017037467.0230