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Titre du document / Document title

New aspects of the contribution of primary defects of silicon to long-time degradation of detectors operating in high fields of radiation

Auteur(s) / Author(s)


Résumé / Abstract

Silicon detectors will be used in the next generation of experiments in high energy physics and bulk damage is the main limitation in their utilisation. Although silicon is the most studied semiconductor, and the studies of defects in silicon have a long history, until now it is not completely established what are all primary defects in silicon, and what are their properties. In this contribution we investigate the new perspective in understanding fundamental phenomena in silicon and implications for the damage of detector characteristics due to the existence of the new primary fourfold coordinated defect, with a lower value of the formation energy in respect to the "classically" known vacancies and interstitials. The effects of its existence at device level are investigated, and possible consequences for the detectors in the next generation of experiments are discussed.

Revue / Journal Title

Journal of optoelectronics and advanced materials    ISSN  1454-4164 

Source / Source

2007, vol. 9, no6, pp. 1839-1842 [4 page(s) (article)]

Langue / Language


Editeur / Publisher

INOE 2000, Bucuresti,   (1999) (Revue)

Localisation / Location

INIST-CNRS, Cote INIST : 27497, 35400014678313.0530

Nº notice refdoc (ud4) : 18802132

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