Titre du document / Document title
Primary defects in silicon : existence, characteristics, and their role after high fluence irradiation
Auteur(s) / Author(s)LAZANU S.
Résumé / Abstract
In this contribution, an extensive analysis of the primary defects in silicon: vacancy, interstitial and SiFFcD is performed. Irradiation studies are a useful tool to study production, characteristics and annealing of defects. The experimental results obtained after high proton fluence irradiation of silicon detectors are used in this paper to understand aspects related to the existence and proprieties of primary defects. Investigations on possible differences induced by irradiation in the lattice of silicon, using transmission electron microscopy analysis, have been started and some first preliminary results are presented.
Revue / Journal TitleJournal of optoelectronics and advanced materials
Source / Source
2007, vol. 9, no
4, pp. 814-817 [4 page(s) (article)]
Langue / Language
Editeur / Publisher
INOE 2000, Bucuresti,
Localisation / Location
INIST-CNRS, Cote INIST : 27497, 35400014688148.0030
Nº notice refdoc (ud4) : 18762112