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Titre du document / Document title

Primary defects in silicon : existence, characteristics, and their role after high fluence irradiation

Auteur(s) / Author(s)


Résumé / Abstract

In this contribution, an extensive analysis of the primary defects in silicon: vacancy, interstitial and SiFFcD is performed. Irradiation studies are a useful tool to study production, characteristics and annealing of defects. The experimental results obtained after high proton fluence irradiation of silicon detectors are used in this paper to understand aspects related to the existence and proprieties of primary defects. Investigations on possible differences induced by irradiation in the lattice of silicon, using transmission electron microscopy analysis, have been started and some first preliminary results are presented.

Revue / Journal Title

Journal of optoelectronics and advanced materials    ISSN  1454-4164 

Source / Source

2007, vol. 9, no4, pp. 814-817 [4 page(s) (article)]

Langue / Language


Editeur / Publisher

INOE 2000, Bucuresti,   (1999) (Revue)

Localisation / Location

INIST-CNRS, Cote INIST : 27497, 35400014688148.0030

Nº notice refdoc (ud4) : 18762112

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