Organic CMOS-technology by interface treatment

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Titre du document / Document title

Organic CMOS-technology by interface treatment

Auteur(s) / Author(s)

BENSON Niels⁽¹⁾ ; AHLES Marcus⁽¹⁾ ; SCHIDLEJA Martin⁽¹⁾ ; GASSMANN Andrea⁽¹⁾ ; MANKEL Eric⁽¹⁾ ; MAYER Thomas⁽¹⁾ ; MELZER Christian⁽¹⁾ ; SCHMECHEL Roland⁽¹⁾ ; VON SEGGEM Heinz⁽¹⁾ ;

Affiliation(s) du ou des auteurs / Author(s) Affiliation(s)

⁽¹⁾TU Darmstadt, Institute for Material Science, Petersenstr. 23, 642897 Darmstadt, ALLEMAGNE

Résumé / Abstract

In the present paper a new concept towards O-CMOS technology is presented substantiating the importance of the semiconductor/dielectric interface for charge carrier transport in organic semiconductors. It will be demonstrated that by controlling the interface properties of either SiO₂ or PMMA, unipolar p- and n-type OFETs can be realized using a single organic semiconductor and even a single metal for source and drain contacts. Two dielectric/semiconductor interface modifications are considered for the realization of complementary OFETs on the basis of pentacene, otherwise known for its exclusive hole transporting properties. Selective modification of the SiO₂ dielectric interface with traces of vacuum deposited Ca, allows for electron transport in pentacene and the realization of complementary pentacene OFETs on a single substrate. By this technique electron traps are removed due to a reaction of atomic Ca with oxygen from available hydroxide groups, resulting in the formation of an oxidized Ca layer. In a second approach, it is demonstrated that by selective UV treatment of a PMMA dielectric surface, unipolar n-type pentacene OFETs can be converted to unipolar p-type by the introduction of electron traps in the form of -OH and -COOH groups at the PMMA interface. Both methods allow for the realization of CMOS organic inverter stages with decent electrical properties.

Revue / Journal Title

Proceedings of SPIE, the International Society for Optical Engineering ISSN 0277-786X CODEN PSISDG

Source / Source

Congrès
Organic field-effect transistors V : ( 13-15 August, 2006, San Diego, California, USA )
Organic field-effect transistors. Conference N^o5, San Diego CA , ETATS-UNIS (2006)
2006 , vol. 6336, pp. 63360S.1-63360S.11[Note(s) : various pagings, ] (14 ref.) ISBN 0-8194-6415-5 ; Illustration : Illustration ;

Langue / Language

Anglais

Editeur / Publisher

Society of Photo-Optical Instrumentation Engineers, Bellingham, WA, ETATS-UNIS (1981) (Revue)
SPIE, Bellingham, Wash., ETATS-UNIS (2006) (Monographie)