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Titre du document / Document title

Remote plasma etching of titanium nitride using NF3/argon and chlorine mixtures for chamber clean applications

Auteur(s) / Author(s)

HELLRIEGEL Ronald (1) ; ALBERT Matthias (2) ; HINTZE Bernd (1) ; WINZIG Hubert (1) ; BARTHA J. W. (2) ;

Affiliation(s) du ou des auteurs / Author(s) Affiliation(s)

(1) Qimonda AG, Dresden, ALLEMAGNE
(2) Institut für Halbleiter-und Mikrosystemtechnik, TU-Dresden, 01099 Dresden, ALLEMAGNE

Résumé / Abstract

To avoid plasma induced erosion of chamber hardware, the application of remote plasma sources to activate the etch gases was introduced. We present results on the etch behaviour of titanium nitride (TiN) using mixtures of NF3, Cl2 and argon. The gas mixture was excited in a remote plasma source and then routed through a reaction chamber to study the etch behaviour of TiN samples which simulate the situation at the chamber walls. The dependency of the TiN etch rate on temperature, gas flow, composition and pressure was examined. While the temperature (studied in the range 25-300 °C) turned out to be the most sensitive parameter, the general etch rate was mainly dependent on the availability of atomic fluorine. Etch products and NF3/Cl2 dissociation have been monitored by quadrupole mass spectrometry and infrared spectroscopy. While NF3 showed a high decomposition up to 96%, chlorine decomposition was not observed. However the addition of chlorine increased the etch rates up to 260% in the low pressure/low temperature regime. Surface effects of chlorine addition are indicated by X-Ray Photoelectron Spectrometry and REM surface analysis.

Revue / Journal Title

Microelectronic engineering    ISSN  0167-9317   CODEN MIENEF 

Source / Source

2007, vol. 84, no1, pp. 37-41 [5 page(s) (article)] (9 ref.)

Langue / Language

Anglais

Editeur / Publisher

Elsevier, Amsterdam, PAYS-BAS  (1983) (Revue)

Mots-clés anglais / English Keywords

Microelectronic fabrication

;

Surface analysis

;

X ray spectrometry

;

Surface effect

;

Low pressure

;

Infrared spectrometry

;

Mass spectrometry

;

Gas flow

;

Etching rate

;

Gas mixture

;

Plasma sources

;

Plasma application

;

Plasma etching

;

Mots-clés français / French Keywords

Fabrication microélectronique

;

Analyse surface

;

Spectrométrie RX

;

Effet surface

;

Basse pression

;

Spectrométrie IR

;

Spectrométrie masse

;

Ecoulement gaz

;

Vitesse gravure

;

Mélange gaz

;

Source plasma

;

Application plasma

;

Gravure plasma

;

Mots-clés espagnols / Spanish Keywords

Fabricación microeléctrica

;

Análisis superficie

;

Espectrometría RX

;

Efecto superficie

;

Baja presión

;

Espectrometría IR

;

Espectrometría masa

;

Flujo gas

;

Velocidad grabado

;

Mezcla gas

;

Aplicación plasma

;

Grabado plasma

;

Mots-clés d'auteur / Author Keywords

Chamber clean

;

NF3

;

Cl2

;

ClF3

;

RPS

;

Remote plasma

;

Nitrogen trifluoride

;

Localisation / Location

INIST-CNRS, Cote INIST : 20003, 35400014529235.0070

Nº notice refdoc (ud4) : 18431084



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