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Titre du document / Document title

Pulsed electrodeposition of copper metallization from an alkaline bath

Auteur(s) / Author(s)

KRISHNAMOORTHY A. (1) ; LEE C. Y. (1) ; DUQUETTE D. J. (1) ; MURARKA S. P. (1) ;

Affiliation(s) du ou des auteurs / Author(s) Affiliation(s)

(1) Materials Research Center, Rensselaer Polytechnic Institute, Troy, NY 12180, ETATS-UNIS

Résumé / Abstract

This paper describes the role of pulse parameters and bath composition on the electrochemical deposition of copper as a metallization technique for the fabrication of multilevel interconnects. The electrochemical behavior of an alkaline solution of varying composition was studied using potentiodynamic polarization experiments. A potential range corresponding to the desired current density was thus selected. Pulse plating experiments were performed at various forward and forward/reverse pulse cycles. Cross sections of the patterned wafers were examined using SEM. Electrodeposition using forward/reverse pulse cycles on the order of 1 ms provided excellent feature filling. These results provide a basis for further work for plating on wafers with smaller feature size and higher aspect ratios.

Revue / Journal Title

Proceedings - Electrochemical Society    ISSN  0161-6374 

Source / Source

Congrès
Electrochemical processing in ULSI fabrication I and Interconnect and contact metallization : materials, processes, and reliability :   ( San Diego CA, 4-5 May 1998 )
Electrochemical processing in ULSI fabrication. Symposium No1, San Diego CA , ETATS-UNIS (04/05/1998)
Interconnect and contact metallization. Symposium, San Diego CA , ETATS-UNIS (04/05/1998)
1999  , vol. 6, pp. 185-194[Note(s) : VIII, 274 p., ] (10 ref.) ISBN 1-56677-200-1 ;  Illustration : Illustration ;

Langue / Language

Anglais

Editeur / Publisher

Electrochemical Society, Pennington, NJ, ETATS-UNIS  (19?) (Revue)
Electrochemical Society, Pennington NJ, ETATS-UNIS  (1999) (Monographie)

Mots-clés anglais / English Keywords

Integrated circuit

;

ULSI circuit

;

Interconnection

;

Electrodeposition

;

Copper

;

Metallizing

;

Pulse sequence

;

Multilevel system

;

Basic solution

;

Potentiodynamic method

;

Current density

;

Wafer

;

Scanning electron microscopy

;

Mots-clés français / French Keywords

Circuit intégré

;

Circuit ULSI

;

Interconnexion

;

Dépôt électrolytique

;

Cuivre

;

Métallisation

;

Séquence impulsion

;

Système n niveaux

;

Solution basique

;

Méthode potentiodynamique

;

Densité courant

;

Pastille électronique

;

Microscopie électronique balayage

;

Mots-clés espagnols / Spanish Keywords

Circuito integrado

;

Circuito ULSI

;

Interconexión

;

Depósito electrolítico

;

Cobre

;

Metalización

;

Secuencia impulsos

;

Sistema n niveles

;

Solución básica

;

Método potenciodinámico

;

Densidad corriente

;

Pastilla electrónica

;

Microscopía electrónica barrido

;

Localisation / Location

INIST-CNRS, Cote INIST : 22195, 35400008453863.0200

Nº notice refdoc (ud4) : 1822031



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