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Titre du document / Document title

Fabrication of organic thin film transistor with MICB-deposited PI insulation layer

Auteur(s) / Author(s)

CHO S. J. (1) ; CHOI M. K. (1) ; KIM S. O. (2) ; SONG J. K. (2) ; YOON H. M. (3) ; JIN S. H. (4) ; KWON T. W. (1) ; WOO H. S. ; PARK D. K. (1) ;

Affiliation(s) du ou des auteurs / Author(s) Affiliation(s)

(1) Center for Organic Devices and Advanced Materials, Kyungsung University, Busan 608-736, COREE, REPUBLIQUE DE
(2) Media Device Center, Dong-A University, Busan 604-714, COREE, REPUBLIQUE DE
(3) Department of Civil Engineering, Dongeui University, Busan 614-714, COREE, REPUBLIQUE DE
(4) Department of Chemistry Education, Busan National University, Busan 609-735, COREE, REPUBLIQUE DE

Résumé / Abstract

In this work, as a new flexible gate insulator of organic thin film transistor (OTFT) device, PMDA-ODA-type polyimide (PI) were inserted between ITO and pentacene layer using modified ionized cluster beam (MICB) deposition method. The grain size of pentacene layers deposited by MICB method on ordered PI substrates was bigger than those by using conventional deposition method. The grain growth effect could be a good clue to explain increased mobility of our devices with MICB-deposited PI gate insulator. Since the flexibility and elasticity of polymeric gate insulator and conducting electrodes are essential for fabrication of flexible displays, the results of this work could be used for developing flexible all-organic devices and displays.

Revue / Journal Title

Journal of crystal growth    ISSN  0022-0248   CODEN JCRGAE 

Source / Source

Congrès
International Conference on Materials for Advanced Technologies (ICMAT 2005) Symposium M, Singapore , SINGAPOUR (04/07/2005)
2006, vol. 288, no 1 (226 p.)  [Document : 4 p.] (11 ref.), pp. 140-143 [4 page(s) (article)]

Langue / Language

Anglais

Editeur / Publisher

Elsevier, Amsterdam, PAYS-BAS  (1967) (Revue)

Mots-clés anglais / English Keywords

Polyimide

;

Thin film

;

Interface

;

Elasticity

;

Flexibility

;

Grain growth

;

Grain size

;

Ionized cluster beam deposition

;

Thin film device

;

Field effect transistor

;

Mots-clés français / French Keywords

8530T

;

Imide polymère

;

Couche mince

;

Interface

;

Elasticité

;

Flexibilité

;

Croissance grain

;

Grosseur grain

;

Dépôt jet agrégat ionisé

;

Dispositif couche mince

;

Transistor effet champ

;

Mots-clés espagnols / Spanish Keywords

Imida polímero

;

Capa fina

;

Interfase

;

Elasticidad

;

Flexibilidad

;

Crecimiento grano

;

Grosor grano

;

Dispositivo capa delgada

;

Transistor efecto campo

;

Mots-clés d'auteur / Author Keywords

72.80.Le.: 73.61.Ph A Interfaces

;

Al. Morphological stability

;

A3. Migration enhanced epitaxy

;

Bl. Organic compounds

;

Bl. Polymers

;

B3. Field effect transistors

;

Localisation / Location

INIST-CNRS, Cote INIST : 13507, 35400013318630.0310

Nº notice refdoc (ud4) : 17551451



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