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Titre du document / Document title

Ka-band MMIC power amplifier in GaN HFET technology

Auteur(s) / Author(s)

MICOVIC M. (1) ; KURDOGHLIAN Ara (1) ; MOYER H. P. (1) ; HASHIMOTO P. (1) ; SCHMITZ A. (1) ; MILOSAVLJEVIC I. (1) ; WILLADSEN P. J. (1) ; WONG W.-S. (1) ; DUVALL J. (1) ; HU M. (1) ; DELANEY M. J. (1) ; CHOW D. H. (1) ;

Affiliation(s) du ou des auteurs / Author(s) Affiliation(s)

(1) HRL Laboratories LLC, 3011 Malibu Canyon Road, Malibu, CA 90265, ETATS-UNIS

Résumé / Abstract

We report the development of Ka-band GaN MMIC power amplifiers in CPW and microstrip topologies. This is, to the best of our knowledge, the first demonstration of millimeter wave MMIC's in GaN technology. The single stage CPW MMIC utilizes four 2x100 μm wide GaN HFET's, whilst four 4x60 pm wide HFET's with Individual through Substrate Source Vias were used for the microstrip MMIC's. The CPW amplifier has a gain peak of 8 dB at 33 GHz with 4 GHz bandwidth while the microstrip amplifier has a peak gain of 9 dB at 27 GHz and gain higher than 8 dB over the 24.5 GHz to 33 GHz frequency range. The saturated CW output power of the amplifiers measured into a 50 Ω system at 33 GHz was, respectively, 1.6 W for the CPW MMIC and 2.2 W for the microstrip MMIC. The corresponding power density of 23 W per mm of gate periphery for the microstrip MMIC is by a factor of 4 higher than that of a typical GaAs pHEMT MMIC at this frequency. Microstrip MMIC performance was further improved through external output impedance matching, resulting in power levels of up to 2.8 W (27% associated PAE) and peak PAE's of up to 36.2% (1.2 W associated power).

Source / Source

Congrès
2004 IEEE MTT-S International Microwave Symposium Digest :   ( June 6-11, 2004, Fort Worth Convention Center, Fort Worth Texas )
IEEE MTT-S International Microwave Symposium, Fort Worth TX , ETATS-UNIS (06/06/2004)
2004  [Note(s) : 3 vol.(LXXIX-2069 p.), ] (6 ref.) ISBN 0-7803-8331-1 ;  Illustration : Illustration ;

Langue / Language

Anglais

Editeur / Publisher

IEEE, Piscataway NJ, ETATS-UNIS  (2004) (Monographie)

Mots-clés anglais / English Keywords

Microwave

;

Impedance matching

;

Output impedance

;

Performance evaluation

;

High electron mobility transistor

;

Pseudomorphic transistor

;

Output power

;

Continuous wave

;

GHz range

;

Gain

;

S wave

;

Millimetric wave

;

Coplanar waveguides

;

Transistor amplifiers

;

Heterojunction field effect transistor

;

Power amplifier

;

MMIC

;

Microwave amplifier

;

Ka band

;

Mots-clés français / French Keywords

Hyperfréquence

;

Adaptation impédance

;

Impédance sortie

;

Evaluation performance

;

Transistor mobilité électron élevée

;

Transistor pseudomorphique

;

Puissance sortie

;

Onde entretenue

;

Domaine fréquence GHz

;

Gain

;

Onde S

;

Onde millimétrique

;

Guide onde coplanaire

;

Amplificateur à transistor

;

Transistor effet champ hétérojonction

;

Amplificateur puissance

;

Circuit MMIC

;

Amplificateur hyperfréquence

;

Bande Ka

;

Mots-clés espagnols / Spanish Keywords

Hiperfrecuencia

;

Adaptación impedancia

;

Impedancia salida

;

Evaluación prestación

;

Transistor movibilidad elevada electrones

;

Transistor pseudomórfico

;

Potencia salida

;

Onda continua

;

Ganancia

;

Onda S

;

Onda milimétrica

;

Transistor efecto campo heterounión

;

Amplificador potencia

;

Amplificador hiperfrecuencia

;

Banda Ka

;

Localisation / Location

INIST-CNRS, Cote INIST : Y 38576(1), 35400013866638.3840

Nº notice refdoc (ud4) : 17457547



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