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Titre du document / Document title

A high yield rate MEMS gyroscope with a packaged SiOG process

Auteur(s) / Author(s)

MOON CHUL LEE (1) ; SEOK JIN KANG (2) ; KYU DONG JUNG (1) ; CHOA Sung-Hoon (2) ; YONG CHUL CHO (2) ;

Affiliation(s) du ou des auteurs / Author(s) Affiliation(s)

(1) Packaging Center, Samsung Advanced Institute of Technology, PO Box 111, Suwon 440-600, COREE, REPUBLIQUE DE
(2) MEMS Lab, Samsung Advanced Institute of Technology, PO Box 111, Suwon 440-600, COREE, REPUBLIQUE DE

Résumé / Abstract

MEMS devices such as a vibratory gyroscope often suffer from a lower yield rate due to fabrication errors and external stress. In the decoupled vibratory gyroscope, the main factor that determines the yield rate is the frequency difference between the sensing and driving modes. The gyroscope, fabricated with a SOI (silicon-on-insulator) wafer and packaged using anodic bonding, has a large wafer bowing caused by thermal expansion mismatch as well as non-uniform surfaces of the structures caused by the notching effect. These effects result in a large distribution in the frequency difference, and thereby a lower yield rate. To improve the yield rate we propose a packaged SiOG (silicon-on-glass) technology. It uses a silicon wafer and two glass wafers to minimize the wafer bowing and a metallic membrane to avoid the notching. In the packaged SiOG gyroscope, the notching effect is eliminated and the warpage of the wafer is greatly reduced. Consequently, the frequency difference is more uniformly distributed and its variation is greatly improved. Therefore, we can achieve a more robust vibratory MEMS gyroscope with a higher yield rate.

Revue / Journal Title

Journal of micromechanics and microengineering    ISSN  0960-1317 

Source / Source

2005, vol. 15, no11, pp. 2003-2010 [8 page(s) (article)] (18 ref.)

Langue / Language

Anglais

Editeur / Publisher

Institute of Physics, Bristol, ROYAUME-UNI  (1991) (Revue)

Mots-clés anglais / English Keywords

Glass

;

Silicon

;

Sog

;

Surface structure

;

Thermal expansion

;

Wafer bonding

;

Anodic bonding

;

Manufacturing defect

;

Encapsulation

;

Thermomechanical properties

;

Silicon-on-insulator

;

Gyroscopes

;

Microelectromechanical device

;

Mots-clés français / French Keywords

Verre

;

Silicium

;

Technologie silicium sur verre

;

Structure surface

;

Dilatation thermique

;

Fixation pastille

;

Fixation anodique

;

Défaut fabrication

;

Encapsulation

;

Propriété thermomécanique

;

Technologie silicium sur isolant

;

Gyroscope

;

Dispositif microélectromécanique

;

Mots-clés espagnols / Spanish Keywords

Tecnología SOG

;

Fijación anódica

;

Defecto fabricación

;

Propriedad termomecánica

;

Dispositivo microelectromecánico

;

Localisation / Location

INIST-CNRS, Cote INIST : 22483, 35400013551248.0040

Nº notice refdoc (ud4) : 17259965



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