Titre du document / Document title

Deposition and characterization of Ti-Ni-Pd and Ti-Ni-Pt shape memory alloy thin films

Auteur(s) / Author(s)

MOHANCHANDRA K. P. ⁽¹⁾ ; SHIN Daniel ⁽¹⁾ ; CARMAN G. P. ⁽¹⁾ ;

Affiliation(s) du ou des auteurs / Author(s) Affiliation(s)

⁽¹⁾ 38-137 Engineering IV, Mechanical and Aerospace Engineering Department, University of California, Los Angeles, CA 90095, ETATS-UNIS

Résumé / Abstract

Thin films of Ti-Ni-Pd and Ti-Ni-Pt shape memory alloys were produced by a DC magnetron sputtering process. Targets with the following compositions were studied: Ti₅₄Ni₁₆Pd₃₀, Ti₅₄Ni₆Pd₄₀, Ti₅₄Ni₃Pd₄₃ and Ti₅₄Ni₂₆Pt₂₀. The films were deposited on SiO₂/Si substrates at ambient temperature and were crystallized in situ at 550 °C for 1 h. X-ray diffraction data show that the crystal structure of the martensitic phase is orthorhombic (B 19) for all films and texturing is present in the Ti-Ni-Pt films. TEM micrographs show that both Ti-Ni-Pd and Ti-Ni-Pt films have a well defined twin structure at ambient temperature. Transformation temperatures were determined by both DSC and wafer curvature methods. The results indicate that as the Pd content increases to 43 at.% the transformation temperature A_f, austenite finish temperature, increases up to 516 °C. For the Ti-Ni-Pt film, at 20 at.% Pt, the austenite finish temperature is 422 °C compared to 273 °C for Ti-Ni-Pd at 30 at.% Pd. Experimental data also demonstrate that all the films fabricated exhibit the classic shape memory effect.

Revue / Journal Title

Smart materials and structures   ISSN 0964-1726 

Source / Source

2005, vol. 14, n^o5, pp. S312-S316 (13 ref.)

Langue / Language

Anglais

Editeur / Publisher

Institute of Physics, Bristol, ROYAUME-UNI  (1992) (Revue)

Mots-clés anglais / English Keywords

Orthorhombic crystals ; In situ ; Silicon oxides ; Deposition process ; Cathode sputtering ; Reactive sputtering ; Direct current ; Thin films ; Shape memory alloy ; Nickel base alloys ; Deposition ; Shape memory effects ; Differential scanning calorimetry ; Phase transformations ; X-ray radiography ;

Mots-clés français / French Keywords

Cristal orthorhombique ; In situ ; Silicium oxyde ; Procédé dépôt ; Pulvérisation cathodique ; Pulvérisation réactive ; Courant continu ; Couche mince ; Alliage mémoire forme ; Alliage base nickel ; Dépôt ; Effet mémoire forme ; Calorimétrie différentielle balayage ; Transformation phase ; Radiographie RX ;

Mots-clés espagnols / Spanish Keywords

Cristal ortorrómbico ; In situ ; Procedimiento revestimiento ; Aleación memoria forma ;

Localisation / Location

INIST-CNRS, Cote INIST : 26248, 35400013264610.0210