Titre du document / Document title

Fabrication of high-quality p-MOSFET in Ge grown heteroepitaxially on Si

Auteur(s) / Author(s)

NAYFEH Ammar ⁽¹⁾ ; CHI ON CHUI ⁽¹⁾ ; YONEHARA Takao ⁽²⁾ ; SARASWAT Krishna C. ⁽¹⁾ ;

Affiliation(s) du ou des auteurs / Author(s) Affiliation(s)

⁽¹⁾ Department of Electrical Engineering, Stanford University, Stanford, CA 94305, ETATS-UNIS
⁽²⁾ Leading-Edge Technology Development Headquarters, Canon, Inc, Kanagawa 2434193, JAPON

Résumé / Abstract

We have successfully demonstrated high-performance p-MOSFETs in germanium grown directly on Si using a novel heteroepitaxial growth technique, which uses multisteps of hydrogen annealing and growth to confine misfit dislocations near the Ge-Si interface, thus not threading to the surface as expected in this 4.2% lattice-mismatched system. We used a low thermal budget process with silicon dioxide on germanium oxynitride (GeO_xN_y) gate dielectric and Si_0.75Ge_0.25 gate electrode. Characterization of the device using cross-sectional transmission electron microscopy and atomic force microscopy at different stages of the fabrication illustrates device-quality interfaces that yielded hole effective mobility as high as 250 cm²/Vs.

Revue / Journal Title

IEEE electron device letters   ISSN 0741-3106   CODEN EDLEDZ 

Source / Source

2005, vol. 26, n^o5, pp. 311-313 [3 page(s) (article)] (14 ref.)

Langue / Language

Anglais

Editeur / Publisher

Institute of Electrical and Electronics Engineers, New York, NY, ETATS-UNIS  (1980) (Revue)

Mots-clés anglais / English Keywords

MOS structure ; Hole mobility ; Atomic force microscopy ; Transmission electron microscopy ; Mismatch lattice ; Misfit dislocation ; Annealing ; Multistep method ; High performance ; MOSFET ;

Mots-clés français / French Keywords

Structure MOS ; Mobilité trou ; Microscopie force atomique ; Microscopie électronique transmission ; Accommodation réseau ; Dislocation interfaciale ; Recuit ; Méthode multipas ; Haute performance ; Transistor MOSFET ;

Mots-clés espagnols / Spanish Keywords

Estructura MOS ; Movilidad agujero ; Microscopía fuerza atómica ; Microscopía electrónica transmisión ; Acomodación red ; Dislocación interfacial ; Recocido ; Método multipaso ; Alto rendimiento ;

Mots-clés d'auteur / Author Keywords

Anneal ; dislocations ; effective field ; effective mobility ; germanium ; germanium oxynitride (GOI) ; heteroepitaxy ; hydrogen ; mobility ; MOS devices ;

Localisation / Location

INIST-CNRS, Cote INIST : 222 V, 35400012951761.0100