Titre du document / Document title
On distributions of defect states in low-k carbon doped silicon dioxide films in vicinity of Fermi level
Auteur(s) / Author(s)LIGATCHEV V.
WONG T. K. S.
Résumé / Abstract
Spectrum of defect states N(E) in vicinity of Fermi level position in carbon-doped hydrogenated silicon dioxide (SiOCH) low-k films has been experimentally studied by deep level transient spectroscopy (DLTS) and space charge limited current (SCLC) techniques. The SiOCH films were deposited by CVD, using 3-methylsilane-oxygen mixture. Good correlation is found between features of defect spectrum obtained by DLTS and the SCLC techniques for the same SiOCH samples. In particular, N(E) peaks at 0.15-0.20 and 0.25-0.30 eV below Ec
have been detected by both techniques. These peaks are attributed to doubly negatively charged silicon vacancy in hexagonal or rhombohedral SiC-like phases.
Revue / Journal TitleElectrochemical and solid-state letters
Source / Source
2004, vol. 7, no
12, pp. F89-F92
Langue / Language
Editeur / Publisher
Institute of Electrical and Electronics Engineers, Pennington, NJ, ETATS-UNIS
Localisation / Location
INIST-CNRS, Cote INIST : 26649, 35400012127800.0260
Nº notice refdoc (ud4) : 16320837