Titre du document / Document title

On distributions of defect states in low-k carbon doped silicon dioxide films in vicinity of Fermi level

Auteur(s) / Author(s)

LIGATCHEV V. ; WONG T. K. S. ;

Résumé / Abstract

Spectrum of defect states N(E) in vicinity of Fermi level position in carbon-doped hydrogenated silicon dioxide (SiOCH) low-k films has been experimentally studied by deep level transient spectroscopy (DLTS) and space charge limited current (SCLC) techniques. The SiOCH films were deposited by CVD, using 3-methylsilane-oxygen mixture. Good correlation is found between features of defect spectrum obtained by DLTS and the SCLC techniques for the same SiOCH samples. In particular, N(E) peaks at 0.15-0.20 and 0.25-0.30 eV below E^c have been detected by both techniques. These peaks are attributed to doubly negatively charged silicon vacancy in hexagonal or rhombohedral SiC-like phases.

Revue / Journal Title

Electrochemical and solid-state letters    ISSN  1099-0062 

Source / Source

2004, vol. 7, n^o12, pp. F89-F92

Langue / Language

Anglais

Editeur / Publisher

Institute of Electrical and Electronics Engineers, Pennington, NJ, ETATS-UNIS  (1998) (Revue)

Localisation / Location

INIST-CNRS, Cote INIST : 26649, 35400012127800.0260