Titre du document / Document title

Fabrication of a 34 × 34 crossbar structure at 50 nm half-pitch by UV-based nanoimprint lithography

Auteur(s) / Author(s)

JUNG G. Y. ⁽¹⁾ ; GANAPATHIAPPAN S. ⁽¹⁾ ; OHLBERG Douglas A. A. ⁽¹⁾ ; OLYNICK Deirdre L. ⁽²⁾ ; CHEN Y. ⁽¹⁾ ; TONG William M. ^{(1 3)} ; WILLIAMS R. Stanley ⁽¹⁾ ;

Affiliation(s) du ou des auteurs / Author(s) Affiliation(s)

⁽¹⁾ Hewlett-Packard Laboratories, 1501 Page Mill Road, Palo Alto, California 94304, ETATS-UNIS
⁽²⁾ Lawrence Berkeley National Laboratory, 1 Cyclotron Road, MS 02-400, Berkeley, California 94720, ETATS-UNIS
⁽³⁾ Technology Development Operations, Inkjet Technology Platform, Hewlett-Packard Company, 1000 Circle Boulevard, Corvallis, Oregon 97330, ETATS-UNIS

Résumé / Abstract

We have developed a single-layer UV-nanoimprint process, which was utilized to fabricate 34 x 34 crossbar circuits with a half-pitch of 50 nm (equivalent to a bit density of 10 Gbit/cm²). This process contains two innovative ideas to overcome challenges in the nanoimprint at shrinking dimensions. First, our new liquid resist formulation allowed us to minimize the residual resist layer thickness after curing and requires the relatively low imprint pressure of 20 psi. Second, by engineering the surface energy of the substrate we also eliminated the problem of trapped air during contact with the mold such that it spreads the resist and expels trapped air uniformly. Our overall process required fewer processing steps than any bilayer process and yielded high quality results at 50 nm half-pitch.

Revue / Journal Title

Nano letters   ISSN 1530-6984 

Source / Source

2004, vol. 4, n^o7, pp. 1225-1229 [5 page(s) (article)] (9 ref.)

Langue / Language

Anglais

Editeur / Publisher

American Chemical Society, Washington, DC, ETATS-UNIS  (2001) (Revue)

Mots-clés anglais / English Keywords

Transition elements ; Inorganic compounds ; Langmuir-Blodgett films ; Platinum ; Nanowires ; Nanostructured materials ; Resists ; Scanning electron microscopy ; Surface energy ; Curing ; Thickness ; Formulation ; Ultraviolet radiation ; Imprinting ; Nanolithography ; Experimental study ;

Mots-clés français / French Keywords

Métal transition ; Composé minéral ; Substrat verre ; Pt ; Couche Langmuir Blodgett ; Platine ; Nanofil ; Nanomatériau ; Resist ; Microscopie électronique balayage ; Energie surface ; Traitement(durcissement) ; Epaisseur ; Formulation ; Rayonnement UV ; Empreinte ; Nanolithographie ; Etude expérimentale ;

Mots-clés espagnols / Spanish Keywords

Formulación ; Huella ;

Localisation / Location

INIST-CNRS, Cote INIST : 27369, 35400011374866.0110