Titre du document / Document title

Scattering of Å-scale electron probes in silicon

Auteur(s) / Author(s)

DWYER C. ⁽¹⁾ ; ETHERIDGE J. ⁽²⁾ ;

Affiliation(s) du ou des auteurs / Author(s) Affiliation(s)

⁽¹⁾ Department of Materials Science and Metallurgy, University of Cambridge, Pembroke St., Cambridge CB2 3QZ, ROYAUME-UNI
⁽²⁾ School of Physics and Materials Engineering, P.O. Box 69M, Monash University, Victoria 3800, AUSTRALIE

Résumé / Abstract

We use frozen phonon multislice calculations to examine the scattering behaviour of Å-scale electron probes in (001) and (110) silicon. For each crystal orientation, we consider the distribution of scattered intensity in real space as a function of crystal thickness, probe size and probe position. The scattered intensity distribution is found to vary drastically for different probe sizes. For a given probe size, the scattered intensity distribution is also significantly influenced by the crystal orientation. We discuss the implications for the simultaneous acquisition of an annular dark-field image and electron energy loss spectra in the scanning transmission electron microscope, with specific reference to the spatial resolution with which electron energy loss spectra can be related to local atomic structure.

Revue / Journal Title

Ultramicroscopy   ISSN 0304-3991   CODEN ULTRD6 

Source / Source

Congrès
International Workshop on Strategies and Advances in Atomic Level Spectroscopy and Analysis (SALSA' 02), Guadeloupe , GUADELOUPE (05/05/2002)
2003, vol. 96, n^o 3-4 (363 p.)  [Document : 18 p.] (26 ref.), pp. 343-360 [18 page(s) (article)]

Langue / Language

Anglais

Editeur / Publisher

Elsevier, Amsterdam, PAYS-BAS  (1975) (Revue)

Mots-clés anglais / English Keywords

Theoretical study ; Experimental study ; Layer thickness ; Multislice ; Crystal orientation ; Nanometer scale ; Imaging ; Dark field microscopy ; Scanning transmission electron microscopy ; Electron energy loss spectra ; Electron probes ; Silicon ;

Mots-clés français / French Keywords

Etude théorique ; Etude expérimentale ; Epaisseur couche ; Multicoupe ; Orientation cristalline ; Echelle nanométrique ; Formation image ; Microscopie fond sombre ; Microscopie électronique balayage transmission ; Spectre perte énergie électron ; Sonde électronique ; Silicium ;

Mots-clés espagnols / Spanish Keywords

Espesor capa ; Multicorte ; Microscopía fondo oscuro ;

Localisation / Location

INIST-CNRS, Cote INIST : 15936, 35400011134575.0100