Titre du document / Document title

Numerical simulation of GaAs/AlGaAs heterojunctions including interface states and thermionic emission

Auteur(s) / Author(s)

DEBBAR N. ⁽¹⁾ ; AL-MASHARY B. ⁽¹⁾ ;

Affiliation(s) du ou des auteurs / Author(s) Affiliation(s)

⁽¹⁾ Electrical Engineering Department, College of Engineering, P.O. Box 800, King Saud University, Riyadh 11421, ARABIE SAOUDITE

Résumé / Abstract

The authors present a simple formulation to include interface states within the numerical modelling of abrupt heterojunction. In this formulation, the interface states are included in Poisson's equation by expressing the electric potential at the interface as a function of those at the neighbouring mesh points using the boundary condition of the electric displacement. The importance of the interface states on the I-V characteristics is demonstrated through the simulation of n-N and p-N GaAs/AlGaAs abrupt heterojunctions. The interface states are found to affect the I-V characteristics through the change in the barrier resulting from the sheet of charge at the interface. The effect of donor- and acceptor-like states is also investigated. Results show that the acceptor states have stronger impact on the characteristics of isotype heterojunction and the donor states have relatively more effect on the anisotype heterojunction.

Revue / Journal Title

International journal of modelling & simulation   ISSN 0228-6203   CODEN IMSIEK 

Source / Source

2003, vol. 23, n^o2, pp. 103-108 [6 page(s) (article)] (22 ref.)

Langue / Language

Anglais

Editeur / Publisher

Acta Press, Anaheim, CA, ETATS-UNIS  (1981) (Revue)

Mots-clés anglais / English Keywords

Waveform ; Experimental result ; Abrupt junction ; Voltage current curve ; Boundary condition ; Electric potential ; Poisson equation ; Ternary compound ; Aluminium arsenides ; Binary compound ; Gallium arsenides ; Numerical simulation ; Semiconductor device models ; Thermionic emission ; Interface state ; Semiconductor heterojunctions ; Interface structure ;

Mots-clés français / French Keywords

Al As Ga ; AlGaAs ; As Ga ; GaAs ; Forme onde ; Résultat expérimental ; Jonction abrupte ; Caractéristique courant tension ; Condition aux limites ; Potentiel électrique ; Equation Poisson ; Composé ternaire ; Aluminium arséniure ; Composé binaire ; Gallium arséniure ; Simulation numérique ; Modèle dispositif semiconducteur ; Emission thermoionique ; Etat interface ; Hétérojonction semiconducteur ; Structure interface ;

Mots-clés espagnols / Spanish Keywords

Forma onda ; Resultado experimental ; Unión abrupta ; Característica corriente tensión ; Condiciones límites ; Potencial eléctrico ; Ecuación Poisson ; Compuesto ternario ; Compuesto binario ; Simulación numérica ; Emisión termoiónica ; Estado interfase ; Estructura interfaz ;

Mots-clés d'auteur / Author Keywords

Semiconductor heterojunctions ; semiconductor device modelling ; numerical simulation ; GaAs materials/devices ; interface states ;

Localisation / Location

INIST-CNRS, Cote INIST : 19697, 35400010999911.0040