Titre du document / Document title
Dimorphite based gas sensitive thin films
Auteur(s) / Author(s)
MARIAN S.
(1) ;
POTJE-KAMLOTH K.
(2) ;
TSIULYANU D.
(1) ;
LIESS H.-D.
(2) ;
Affiliation(s) du ou des auteurs / Author(s) Affiliation(s)
(1) Technical University, Department of Physics, Datchia str. 41, Chishinau 2060, MOLDOVA, REPUBLIQUE DE
(2) Universität der Bundeswehr München, Fakultät für Elektrotechnik, Institut für Physik, Werner-Heisenberg-Weg 39, 85577 Neubiberg, ALLEMAGNE
Résumé / Abstract
For the first time it was observed that thin films based on artificial dimorphite (As
4S
3) exhibit gas sensitivity at room temperature. A sandwich metal-semiconductor-metal (MSM) structure with dimorphite as the semiconducting material is used as chemical sensor for the detection of propylamine vapor. The gas induced shifts of the current-voltage characteristics as well as of the transient characteristics are studied. The interaction of propylamine vapor with dimorphite leads to an increase of the current, which indicates a gas induced doping effect. A dependence of the gas induced current on the applied voltage and on the gas concentration is found. Results are discussed in terms of gas controlled trapping of injected carriers from electrodes which influences the space charge limited current.
Revue / Journal Title
Thin solid films
ISSN 0040-6090
CODEN THSFAP
Source / Source
2000, vol. 359, n
o1, pp. 108-112 (11 ref.)
Langue / Language
Anglais
Editeur / Publisher
Elsevier, Lausanne, SUISSE
(1967)
(Revue)
Mots-clés anglais / English Keywords
Experimental study ;
Measurement systems ;
Chemical sensors ;
Gas detector ;
IV characteristic ;
Response functions ;
Thin films ;
MSM junctions ;
Arsenic sulfides ;
Mots-clés français / French Keywords
Etude expérimentale ;
Système mesure ;
Capteur chimique ;
Détecteur de gaz ;
Caractéristique courant tension ;
Fonction réponse ;
Couche mince ;
Jonction MSM ;
Arsenic sulfure ;
Matériau capteur ;
As4S3 ;
As S ;
Propylamine ;
Mots-clés espagnols / Spanish Keywords
Detector de gas ;
Localisation / Location
INIST-CNRS, Cote INIST : 13597, 35400008897341.0180
Nº notice refdoc (ud4) : 1459445