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Titre du document / Document title

Effect of hydrogen dilution on amorphous hydrogenated silicon Thin Film Transistors

Auteur(s) / Author(s)

BHATTACHARYA E. (1) ; SREERAMAN S. (1) ; PADMARAM R. (1) ;

Affiliation(s) du ou des auteurs / Author(s) Affiliation(s)

(1) Departinent of Electrical Engineering, Indian Institute of Technology, Madras Chennai-600 036, INDE

Résumé / Abstract

We have studied the effect of gas phase hydrogen dilution on the properties of amorphous hydrogenated silicon (a-Si:H) thin films and on the characteristics of Thin Film Transistors (TFTs) in which the active layer is grown with varying hydrogen dilution., The films showed an initial decrease in conductivity followed by an increase with hydrogen dilution. We think that microcrystallisation at large hydrogen dilution could be the cause of the increase in conductivity. TFTs were made in the inverted staggered structure with a silicon nitride layer as the insulator. We see a factor of 2G improvement in mobility as the gas phase hydrogen concentration is increased from 0% to abor 98% without a significant change in the current ON/OFF ratio.

Revue / Journal Title

SPIE proceedings series  

Source / Source

Congrès
Physics of semiconductor devices :   ( Delhi, 14-18 December 1999 )
International workshop on the physics of semiconductor devices No10, Delhi , INDE (14/12/1999)
2000  , vol. 3975 (2), pp. 345-348[Note(s) : 2 vol.(XX, 1506 p.), ] (5 ref.) ISBN 0-8194-3601-1 ;  Illustration : Illustration ;

Langue / Language

Anglais

Editeur / Publisher

Society of Photo-Optical Instrumentation Engineers, Bellingham, WA, INTERNATIONAL  (1988) (Revue)
SPIE, Bellingham WA, ETATS-UNIS  (2000) (Monographie)

Mots-clés anglais / English Keywords

Amorphous material

;

Thin film transistor

;

Silicon

;

Gas phase

;

Active layer

;

Hydrogen

;

Crystallization

;

Electrical conductivity

;

Deposition process

;

Amorphous state

;

Hydrogenation

;

Dilution

;

Inversion

;

Silicon nitride

;

Mots-clés français / French Keywords

Matériau amorphe

;

Transistor couche mince

;

Silicium

;

Phase gazeuse

;

Couche active

;

Hydrogène

;

Cristallisation

;

Conductivité électrique

;

Procédé dépôt

;

Etat amorphe

;

Hydrogénation

;

Dilution

;

Inversion

;

Silicium nitrure

;

Mots-clés espagnols / Spanish Keywords

Material amorfo

;

Transistor capa delgada

;

Silicio

;

Fase gaseosa

;

Capa activa

;

Hidrógeno

;

Cristalización

;

Conductividad eléctrica

;

Procedimiento revestimiento

;

Estado amorfo

;

Hidrogenación

;

Dilución

;

Inversión

;

Silicio nitruro

;

Localisation / Location

INIST-CNRS, Cote INIST : 21760, 35400009008658.0650

Nº notice refdoc (ud4) : 1381886



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