Titre du document / Document title
Effect of hydrogen dilution on amorphous hydrogenated silicon Thin Film Transistors
Auteur(s) / Author(s)
BHATTACHARYA E. (1) ;
SREERAMAN S. (1) ;
PADMARAM R. (1) ;
Affiliation(s) du ou des auteurs / Author(s) Affiliation(s)
(1) Departinent of Electrical Engineering, Indian Institute of Technology, Madras Chennai-600 036, INDE
Résumé / Abstract
We have studied the effect of gas phase hydrogen dilution on the properties of amorphous hydrogenated silicon (a-Si:H) thin films and on the characteristics of Thin Film Transistors (TFTs) in which the active layer is grown with varying hydrogen dilution., The films showed an initial decrease in conductivity followed by an increase with hydrogen dilution. We think that microcrystallisation at large hydrogen dilution could be the cause of the increase in conductivity. TFTs were made in the inverted staggered structure with a silicon nitride layer as the insulator. We see a factor of 2G improvement in mobility as the gas phase hydrogen concentration is increased from 0% to abor 98% without a significant change in the current ON/OFF ratio.
Revue / Journal Title
SPIE proceedings series
Source / Source
Congrès
Physics of semiconductor devices :
(
Delhi, 14-18 December 1999
)
International workshop on the physics of semiconductor devices N
o10, Delhi
, INDE
(14/12/1999)
2000
, vol. 3975 (2), pp. 345-348[Note(s) : 2 vol.(XX, 1506 p.), ] (5 ref.)
ISBN 0-8194-3601-1 ;
Illustration : Illustration
;
Langue / Language
Anglais
Editeur / Publisher
Society of Photo-Optical Instrumentation Engineers, Bellingham, WA, INTERNATIONAL
(1988)
(Revue)
SPIE, Bellingham WA, ETATS-UNIS
(2000)
(Monographie)
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Localisation / Location
INIST-CNRS, Cote INIST : 21760, 35400009008658.0650
Nº notice refdoc (ud4) : 1381886
