Titre du document / Document title

Growth of single crystals of ZrW₂O₈

Auteur(s) / Author(s)

KOWACH G. R. ⁽¹⁾ ;

Affiliation(s) du ou des auteurs / Author(s) Affiliation(s)

⁽¹⁾ Bell Laboratories, Lucent Technologies, 700 Mountain Avenue, Murray Hill, NJ 07974, ETATS-UNIS

Résumé / Abstract

The compound, ZrW₂O₈, exhibits an unusual negative coefficient of thermal expansion of approximately - 10 ppm/°C over ambient temperatures. The incongruent decomposition point and narrow thermal stability limits of ZrW₂O₈ from 1105 to 1257°C severely restrict crystal growth conditions. However, single crystals of ZrW₂O₈ having masses on the order of a gram were grown by an unusual layered self-flux technique. Crystals were characterized by X-ray diffraction, inductively coupled plasma emission spectroscopy, dilatometry, and etching behavior. Details of the crystal growth technique and possible growth mechanisms are discussed.

Revue / Journal Title

Journal of crystal growth   ISSN 0022-0248   CODEN JCRGAE 

Source / Source

2000, vol. 212, n^o1-2, pp. 167-172 (17 ref.)

Langue / Language

Anglais

Editeur / Publisher

Elsevier, Amsterdam, PAYS-BAS  (1967) (Revue)

Mots-clés anglais / English Keywords

Experimental study ; Crystal growth from solutions ; Flux growth ; Zirconium oxides ; Tungsten oxides ; Monocrystals ; Characterization ; Thermal expansion ; Chemical etching ; Growth mechanism ; Inorganic compounds ; Transition element compounds ;

Mots-clés français / French Keywords

Etude expérimentale ; Croissance cristalline en solution ; Méthode fondant ; Zirconium oxyde ; Tungstène oxyde ; Monocristal ; Caractérisation ; Dilatation thermique ; Attaque chimique ; Mécanisme croissance ; Méthode autofondant ; ZrW2O8 ; O W Zr ; Composé minéral ; Métal transition composé ;

Mots-clés espagnols / Spanish Keywords

Método fundente ; Caracterización ; Ataque químico ; Mecanismo crecimiento ;

Localisation / Location

INIST-CNRS, Cote INIST : 13507, 35400008743529.0250